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  • 8 September 2016 14:34

Leti to Collaborate on Next-Gen SiOx Non-Volatiile Memory

Weebit Nano announces its collaboration with Leti, a leading French microelectronics research institute.

  • Partners will work on advanced resistive random-access memory (ReRAM) based on silicon oxide (SiOx)
  • Agreement represents a critical step in creating a technology for superior flash-memory replacement in a market estimated at ~ $US35 billion in 2015
  • Potential applications include embedded memory for solid-state storage in cloud/data centres,medical devices and “Internet of Things” (IoT)
  • Weebit’s core technology has shown the potential to deliver a 1,000x faster, cheaper and a 1,000x more energy-efficient memory than flash

    HOD HASHARON, Israel – Sept. 8, 2016 – Weebit Nano Ltd [ASX: WBT], today announced its collaboration with Leti, a leading French microelectronics research institute, to develop advanced ReRAM memory technology based on silicon oxide (SiOx) to replace flash memory.

    The two partners will develop SiOx ReRAM memory that is scalable to 40 nanometres, which opens opportunities in multi-billion-dollar memory markets. ReRAM technology is forecasted to replace flash memory that is approaching its scaling limits. The flash market was estimated to total nearly ~ $US35 billion in 2015 and expected to grow exponentially over the next five years.

    “I am very excited about the partnership Weebit has created with Leti,” said David (Dadi) Perlmutter, chairman of Weebit’s board. “I believe that ReRam technology has significant potential to revolutionise the non-volatile memory business, creating huge business opportunities in new and evolving market segments. Leti not only gives recognition to the potential of the technology, but also gives us a push to get it to a mature and manufacturable phase – a phase where many technology companies fail.”

    The agreement provides significant, tangible deliverables and milestones, for which the partners are working on in close collaboration. Thanks to this common work, successful development of the technology will allow Weebit to engage in commercial relationships with leading global memory manufacturers.

    Leti, an institute of CEA Tech, is a research and development organization recognized worldwide as a leader in the field of micro- and nanoelectronics. Weebit will benefit from its deep expertise and extensive experience in emerging memory and ReRAM, while having access to some of the world’s most advanced facilities, including 8,500m of semiconductor cleanroom area.

    “Weebit’s SiOx solution promises to make major advances in the memory arena thanks to the intrinsic scalability of its technology,” said Luca Perniola, manager of Leti’s Advanced Memory Laboratory. “Leti is eager to apply its deep expertise in back-end-of-line memories to Weebit’s proprietary technology and to strengthen the company’s offer. This joint program will demonstrate manufacturing feasibility and reduce Weebit’s time to market.”

    Weebit CEO Yossi Keret said the company views ReRAM as the leading emerging memory to replace flash, not only in mass storage environments such as in cloud data centres and solid-state drives, but also in diverse consumer-related fields like wearable devices, and embedded memory in devices used by health care and automotive industries. The IoT market alone is estimated to reach trillions of dollars per year as 50 billion devices are expected to be connected to the Internet by 2020. Most of those devices will require embedded non-volatile memory.

    “This collaboration marks the recognition of Weebit as a credible player in the memory space on course to deliver solutions for the memory market’s requirements of tomorrow,” Keret added. “We are excited about this collaboration with Leti, which will greatly enhance our competitive advantage utilising our silicon-oxide memory know-how and patents. Our technology and the growing need for storage in the cloud era, and its requirement for new types of memory to support this multi-billiondollar marketplace, position Weebit at the forefront of the world’s memory technology development.”

    Weebit’s patented technology relies on the use of SiOx, a core differentiator compared to other memory-technology offerings. SiOx is the most abundant material in the semiconductor industry and can work with all existing fabricator processes without re-tooling. This makes it a very cost-effective and efficient material, enabling a seamless introduction to manufacturers’ development processes.

    Entry into this contract is consistent with Weebit Nano’s objectives set out in the prospectus.

    About Weebit Nano (Israel)
    Weebit-Nano is one of the few start-up companies that develop Resistive RAM (ReRAM), a next generation Non-Volatile Memory storage device. This emerging technology aims to replace flash in the future. Based in Israel – the “start-up nation” - Weebit has licensed ReRAM technology from Professor James Tour of Rice University. Professor Tour is – one of the world’s most renowned nanoelectronics researchers. A few of his achievements include: being inducted in the National Academy of Inventors in 2015, being listed as one of “The World’s Most Influential Scientific Minds” by Thomson Reuters’ ScienceWatch.com in 2014, and being named “Scientist of the Year” by R&D Magazine in 2013. Weebit’s board of directors includes David Perlmutter who served as an Executive Vice President and General Manager of the Intel Architecture Group (IAG), chief product officer of Intel Corporation until 2014 and managing general partner in Eucalyptus Growth Capital, where he serves jointly with Rami Hadar, another Weebit Nano board member and the former CEO of Allot Communication (NASDAQ:ALLT)

    About Leti (France)
    As one of three advanced-research institutes within the CEA Technological Research Division, Leti serves as a bridge between basic research and production of micro- and nanotechnologies that improve the lives of people around the world. It is committed to creating innovation and transferring it to industry. Backed by its portfolio of 2,800 patents, Leti partners with large industrials, SMEs and startups to tailor advanced solutions that strengthen their competitive positions. It has launched 59 startups. Its 8,500m² of new-generation cleanroom space feature 200mm and 300mm wafer processing of micro and nano solutions for applications ranging from space to smart devices. With a staff of more than 1,900, Leti is based in Grenoble, France, and has offices in Silicon Valley, Calif., and Tokyo. Follow us on www.leti.fr and @CEA_Leti.

    Media contact
    Media & Capital Partners
    Ben Grubb
    D. +61 414 197 508

    Investor Relations Contact
    Armada Capital
    Michael Shaw-Taylor
    D. +612 9276 1203
    M. +61 477383 390

    Weebit Contact
    Yossi Keret
    D. +972 9 7797 822
    M. +972 54 8008 404

    Caution Regarding Forward Looking Information This release contains certain statements that constitute forward-looking statements. Examples of such statements include, but are not limited to, statements regarding the design, scope, initiation, conduct and results of our research and development programs; our plans and objectives for future operations; and the potential benefits of our products and research technologies. In some cases, forward-looking statements can be identified by the use of terminology such as “may,” “will,” “expects,” “plans,” “anticipates,” “estimates,” “potential” or “continue” or the negative thereof or other comparable terminology. These statements involve a number of risks and uncertainties that could cause actual results and the timing of events to differ materially from those anticipated by these forward-looking statements. These risks and uncertainties include a variety of factors, some of which are beyond our control. All forward-looking statements and reasons why actual results may differ are based on information available to us when initially made, and we assume no obligation to update these forward-looking statements or reasons why actual results might differ or the information set forth herein.

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